Bol Group – Synthesis and Integration of 2D Materials

Bol Group

ALD is a scalable, low temperature preparation method for thin films which offers precise thickness control down to the sub-monolayer and can therefore be instrumental for the large area synthesis of 2D materials. We use plasma chemistry (plasma-enhanced ALD, PE-ALD) to control functionalities of the 2D-TMDs, such as morphology, materials phase and stoichiometry. 

By doping, alloying and by the formation of heterostructures we tune the electrical properties of the 2D TMDs, such as the charge carrier concentration and band gap to realize their future applications in (opto)-electronics, electrocatalysis and quantum technology.

HAADF-STEM images with atomic resolution of TiS2 and TiS3 cross-sections by PE-ALD. Source: Basuvalingam S. et al. (2019) Chem. Mater., 31, 9354-9362

HAADF-STEM images of MoxW1-xS2 showing the difference in atomic ordering upon changing the supercycle length by PE-ALD. Source: Schulpen, J.J.P.M. et al. (2022) 2D Mater. 9, 025016

Latest Group News

Our latest article about low temperature ALD of transition metal dichalcogenides now out in Chemistry of Materials!

Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistry
Our latest paper describes a method for deposition of thin films of transition metal dichalcogenides including MoS2, TiS2, and WS2 at temperatures as low as 100 °C using PEALD. The ability to deposit MoS2 and the like at 100 °C allows direct deposition on cheap plastics like PET (=the soda bottle plastic) which is an important step toward flexible applications. 

Ageeth Bol Joins Michigan Chemistry!

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